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GL60N04A4
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GL60N04A4
Vdss:     40 V
Package:     TO-252
Id:     60 A
Rdson(typ):     7.5 mΩ
Rdson(max):     13 mΩ
产品详情


General Description:

The GL60N04A4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-252, which accords with the RoHS standard.




Features:

Fast Switching

Low Gate Charge and Rdson

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test




Applications:

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply


AbsoluteTc=25℃ unless otherwise specified)


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
40
V
ID
Continuous Drain Current
60
A

Continuous Drain Current TC = 100 °C
42
A
IDM
Pulsed Drain Current
200
A
VGS
Gate-to-Source Voltage
±20
V
EAS a2
Single Pulse Avalanche Energy
400
mJ
EAR a1
Avalanche Energy ,Repetitive
50
mJ
IAR a1
Avalanche Current
30
A
dv/dt a3
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
65
W
TJTstg
Operating Junction and Storage Temperature Range
17555 to 175
TL
Maximum Temperature for Soldering
300





Electrical CharacteristicsTc=25℃ unless otherwise specified)


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V,ID=250µA
40
--
--
V
ΔBVDSS/ΔTJ
Bvdss Temperature Coefficient
ID=250uA,Reference25
--
0.1
--
V/
IDSS
Drain to Source Leakage Current
VDS= 40V,VGS=0V,Ta=25
--
--
1
µA


VDS=32V,VGS=0V,Ta=125
--
--
250

IGSS(F)
Gate to Source Forward Leakage
VGS=+20V
--
--
1
µA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-20V
--
--
-1
µA




ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=30A
--
7.5
13
m
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.0
1.6
2.0
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=5V,ID=30A
15
--
--
S
Ciss
Input Capacitance
VGS=0V,VDS=20V
f=1.0MHz
--
1350
--
pF
Coss
Output Capacitance

--
250
--

Crss
Reverse Transfer Capacitance

--
200
--




Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
ID=30A,VDD=20V
VGS=10V,RG=3.0
--
6.5
--
ns
tr
Rise Time

--
17
--

td(OFF)
Turn-Off Delay Time

--
28
--

tf
Fall Time

--
16
--

Qg
Total Gate Charge
ID=30A,VDD=20V
VGS=10V
--
30
--
nC
Qgs
Gate to Source Charge

--
4.7
--

Qgd
Gate to Drain (Miller)Charge

--
6.5
--






Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current (Body Diode)

--
--
60
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
200
A
VSD
Diode Forward Voltage
IS=60A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=60A,Tj = 25°C
dIF/dt=100A/us,VGS=0V
--
30
--
ns
Qrr
Reverse Recovery Charge

--
35
--
nC
Pulse width tp380µs,δ≤2%









Symbol
Parameter
Typ.
Units
Rθc
Junction-to-Case
 2.3
℃/W


a1:Repetitive rating; pulse width limited by maximum junction temperature

a2EAS condition : Tj=25 ,VDD= 30V,VG=10V,L=0.5mH,Rg=25Ω

a3ISD =60A,di/dt ≤100A/us,VDDBVDS, Start TJ=25

CompanyWuxi Guang Lei electronic technology co., LTD

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