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GL20J60AN
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GL20J60AN
Vdss:     600 V
Package:     TO-3P(N)
Id:     20 A
Rdson(typ):     120 mΩ
Rdson(max):     150 mΩ
产品详情



General Description:

GL20J60AN the silicon N-channel Enhanced VDMOSFETS, is obtained by the self-aligned Super-junction Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3P(N), which accords with the RoHS standard.



Features:

Fast Switching

Low Gate Charge and Rdson

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test



Applications:

Switch Mode Power Supply(SMPS)

Uninterruptible Power Supply(UPS)

Power Factor Correction(PFC)



Absolute(Tc= 25℃ unless otherwise specified):


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
600
V
ID
Continuous Drain Current
20
A
IDMa1
Pulsed Drain Current
60
A
VGS
Gate-to-Source Voltage
±30
V
EAS a2
Single Pulse Avalanche Energy
532
mJ
PD
Power Dissipation
166
W
TJTstg
Operating Junction and Storage Temperature Range
15055 to 150
TL
Maximum Temperature for Soldering
300


Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Characteristics


Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Case
0.75
℃/W
RθJA
Junction-to-Ambient
55
℃/W




Electrical CharacteristicsTc=25℃ unless otherwise specified):


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V,ID=250µA
600
--
--
V
IDSS
Drain to Source Leakage Current
VDS=600V,VGS=0V,Ta= 25
--
--
1.0
µA


VDS=480V,VGS=0V,Ta=150
--
--
250

IGSS(F)
Gate to Source Forward Leakage
VGS =+30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VGS =-30V
--
--
-100
nA





ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)a3
Drain-to-Source On-Resistance
VGS=10V,ID=10A
--
0.12
0.15
VGS(TH)
Gate Threshold Voltage
VDS=VGS, ID=250µA
2.0
--
3.0
V





Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfsa3
Forward Transconductance
VDS=10V, ID=20A
--
18.8
--
S
Ciss
Input Capacitance
VGS=0V,VD=25V
f=1.0MHz
--
1600
--
pF
Coss
Output Capacitance

--
14
--

Crss
Reverse Transfer Capacitance

--
225
--





Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
VDD=300V,ID=20A,
VGS=10V Rg=25Ω
--
48
--
ns
tr
Rise Time

--
108
--

td(OFF)
Turn-Off Delay Time

--
176
--

tf
Fall Time

--
50
--

Qg
Total Gate Charge
ID =20A,VDD=480V
VGS=0 to 10V
--
41
--
nC
Qgs
Gate to Source Charge

--
8
--

Qgd
Gate to Drain (Miller)Charge

--
15
--






Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current (Body Diode)

--
--
20
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
60
A
VSD
Diode Forward Voltage
IS=20A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=20A, VGS=0V
IS=IF,di/dt=100A/us
--
440
--
ns
Qrr
Reverse Recovery Charge

--
5.0
--
uC
Pulse width tp380µs,δ≤2%








a1:Repetitive rating; pulse width limited by maximum junction temperature

a2IAS=10A,VDD=50V,RG=25Ω, Starting TJ= 25°C

a3Pulse Test: Pulse width≤380us, Duty Cycle≤2%


Typical Characteristics


CompanyWuxi Guang Lei electronic technology co., LTD

TEL:13961734102Mr.yuan


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