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 GL4606-D8
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GL4606-D8
Package:     SOP-8
产品详情




General Description    

The GL4606-D8 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is SOP-8, which accords with the RoHS standard.

Features

N-Channel

VDS = 30V,ID = 6.5A  

RDS(ON) <28mΩ @ VGS=10V

RDS(ON) < 58mΩ @ VGS=4.5V

P-Channel

VDS = -30V,ID = -7.0A  

RDS(ON) < 35mΩ @ VGS=-10V

RDS(ON) < 70mΩ @ VGS=-4.5V


Low On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage



Absolute Maximum Ratings (TA=25unless otherwise noted)


Parameter
Symbol
N-Channel
P-Channel
Unit

Drain-Source Voltage
VDS
30
-30
V

Gate-Source Voltage
VGS
±20
±20
V

Continuous Drain Current
TA=25
ID
6.5
-7
A

TA=70

5.4
-5.8

Pulsed Drain Current (Note 1)
IDM
30
-30
A

Maximum Power Dissipation
TA=25
PD
2.0
2.0
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
-55 To 150


Thermal Characteristic


Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
N-Ch
62.5
/W
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
P-Ch
62.5
/W


N-CH Electrical Characteristics (TA=25unless otherwise noted)


Parameter  
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics






Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
30
33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current  
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics (Note 3)






Gate Threshold Voltage  
VGS(th)
VDS=VGS,ID=250μA
1
1.6
3
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=6A
-
20
28
m
Forward Transconductance
gFS
VDS=5V,ID=6A
15
-
-
S
Dynamic Characteristics (Note4)






Input Capacitance
Clss
VDS=15V,VGS=0V,
F=1.0MHz
-
255
-
PF
Output Capacitance
Coss

-
45
-
PF
Reverse Transfer Capacitance
Crss

-
35
-
PF
Switching Characteristics (Note 4)






Turn-on Delay Time  
td(on)
VDD=15V, RL=2.5
VGS=10V,RGEN=3
-
4.5
-
nS
Turn-on Rise Time  
tr

-
2.5
-
nS
Turn-Off Delay Time  
td(off)

-
14.5
-
nS
Turn-Off Fall Time  
tf

-
3.5
-
nS
Total Gate Charge  
Qg
VDS=15V,ID=6A,
VGS=10V
-
13
-
nC
Gate-Source Charge
Qgs

-
5.5
-
nC
Gate-Drain Charge  
Qgd

-
3.5
-
nC
Drain-Source Diode Characteristics






Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=6A
-
0.8
1.2
V





P-CH Electrical Characteristics (TA=25unless otherwise noted)


Parameter  
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics






Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-30
-33
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-30V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current  
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics (Note 3)






Gate Threshold Voltage  
VGS(th)
VDS=VGS,ID=-250μA
-1.5
-1.9
-2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-6.5A
-
28
33
m
Forward Transconductance
gFS
VDS=-5V,ID=-6.5A
10
-
-
S
Dynamic Characteristics (Note4)






Input Capacitance
Clss
VDS=-15V,VGS=0V,
F=1.0MHz
-
520
-
PF
Output Capacitance
Coss

-
100
-
PF
Reverse Transfer Capacitance
Crss

-
65
-
PF
Switching Characteristics (Note 4)






Turn-on Delay Time  
td(on)
VDD=-15V, RL=2.3
VGS=-10V,RGEN=6
-
7.5
-
nS
Turn-on Rise Time  
tr

-
5.5
-
nS
Turn-Off Delay Time  
td(off)

-
19
-
nS
Turn-Off Fall Time  
tf

-
7
-
nS
Total Gate Charge  
Qg
VDS=-15V,ID=-6.5A
VGS=-10V
-
9.2
-
nC
Gate-Source Charge
Qgs

-
1.6
-
nC
Gate-Drain Charge  
Qgd

-
2.2
-
nC
Drain-Source Diode Characteristics






Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-6.5A
-
-
-1.2
V


Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t 10 sec.

Pulse Test: Pulse Width 300μs, Duty Cycle 2%.  

Guaranteed by design, not subject to production


N- Channel Typical Electrical and Thermal Characteristics (Curves)

Square Wave Pluse Duration(sec)


Figure 13 Normalized Maximum Transient Thermal Impedance


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