General Description: The GL30P10A8 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-220, which accords with the RoHS standard.
Features: RDS(ON) <55mΩ @ VGS=10V (Typ 45mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Applications: Power switching application Hard switched and high frequency circuits Uninterruptible power supply |  |
Absolute(Tc= 25℃ unless otherwise specified):
Symbol | Parameter | Rating | Units |
VDSS | Drain-to-Source Voltage | -100 | V |
ID | Continuous Drain Current | -30 | A |
IDM | Pulsed Drain Current | -120 | A |
VGS | Gate-to-Source Voltage | ±20 | V |
PD | Power Dissipation | 120 | W |
EAS | Single pulse avalanche energya5 | 300 | mJ |
TJ,Tstg | Operating Junction and Storage Temperature Range | 150,–55 to 150 | ℃ |
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250µA | -100 | -- | -- | V |
IDSS | Drain to Source Leakage Current | VDS=-100V, VGS= 0V,Ta=25℃ | -- | -- | 1.0 | µA |
IGSS(F) | Gate to Source Forward Leakage | VGS=+20V | -- | -- | 0.1 | µA |
IGSS(R) | Gate to Source Reverse Leakage | VGS=-20V | -- | -- | -0.1 | µA |
ON Characteristicsa3 |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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RDS(ON) | Drain-to-Source On-Resistance | VGS=-10V,ID=-15A | -- | 45 | 55 | mΩ |
VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=-250µA | -1 | -- | -3 | V |
Pulse width tp≤380µs,δ≤2% |
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Dynamic Characteristicsa4 |
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Symbol | Parameter | Test Conditions | Rating | Units |
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gfs | Forward Transconductance | VDS=-15V,ID=-10A | 6 | -- | -- | S |
Ciss | Input Capacitance | VGS=0V,VDS=-25V f=1.0MHz | -- | 2700 | -- | pF |
Coss | Output Capacitance |
| -- | 780 | -- |
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Crss | Reverse Transfer Capacitance |
| -- | 450 | -- |
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Resistive Switching Characteristicsa4 |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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td(ON) | Turn-on Delay Time | VDD=-50V,ID=-15A VGS=-10V,RG=9.1Ω | -- | 16 | -- | ns |
tr | Rise Time |
| -- | 80 | -- |
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td(OFF) | Turn-Off Delay Time |
| -- | 44 | -- |
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tf | Fall Time |
| -- | 60 | -- |
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Qg | Total Gate Charge | VDD=-50V, ID=-15A VGS=-10V | -- | 90 | -- | nC |
Qgs | Gate to Source Charge |
| -- | 15 | -- |
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Qgd | Gate to Drain (“Miller”)Charge |
| -- | 36 | -- |
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Source-Drain Diode Characteristics |
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Symbol | Parameter | Test Conditions | Rating | Units |
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| Min. | Typ. | Max. |
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IS | Continuous Source Current a2(Body Diode) |
| -- | -- | -30 | A |
VSD | Diode Forward Voltagea3 | IS=-30A,VGS=0V | -- | -- | -1.5 | V |
Symbol | Parameter | Typ. | Units |
RθJC | Junction-to-Casea2 | 0.8 | ℃/W |
a1:Repetitive Rating: Pulse width limited by maximum junction temperature.
a2:Surface Mounted on FR4 Board, t≤10sec.
a3:Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
a4:Guaranteed by design, not subject to production
a5:EAS condition:Tj=25℃,VDD=-50V,VG=-10V,L=0.5mH,Rg=25Ω
Test circurt:

Characteristics Curve:


Company:Wuxi Guang Lei electronic technology co., LTD
TEL:13961734102 Mr.yuan