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GL30P10A4
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GL30P10A4
Vdss:     -100 V
Package:      TO-252
Id:     -30 A
Rdson(typ):     45 mΩ
Rdson(max):     55 mΩ
产品详情


General Description:

The GL30P10A4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-252, which accords with the RoHS standard.




Features:

RDS(ON) <55mΩ @ VGS=10V (Typ 45mΩ)

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation




Applications:

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply




Absolute(Tc= 25℃ unless otherwise specified)


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
-100
V
ID
Continuous Drain Current
-30
A
IDM
Pulsed Drain Current
-120
A
VGS
Gate-to-Source Voltage
±20
V
PD
Power Dissipation
120
W
EAS
Single pulse avalanche energya5
300
mJ
TJTstg
Operating Junction and Storage Temperature Range
15055 to 150




Electrical Characteristics(Tc= 25℃ unless otherwise specified)


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
-100
--
--
V
IDSS
Drain to Source Leakage Current
VDS=-100V, VGS= 0V,Ta=25
--
--
1.0
µA
IGSS(F)
Gate to Source Forward Leakage
VGS=+20V
--
--
0.1
µA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-20V
--
--
-0.1
µA




ON Characteristicsa3






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=-10V,ID=-15A
--
45
55
m
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=-250µA
-1
--
-3
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristicsa4






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=-15V,ID=-10A
6
--
--
S
Ciss
Input Capacitance
VGS=0V,VDS=-25V
f=1.0MHz
--
2700
--
pF
Coss
Output Capacitance

--
780
--

Crss
Reverse Transfer Capacitance

--
450
--




Resistive Switching Characteristicsa4






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
VDD=-50V,ID=-15A
VGS=-10V,RG=9.1
--
16
--
ns
tr
Rise Time

--
80
--

td(OFF)
Turn-Off Delay Time

--
44
--

tf
Fall Time

--
60
--

Qg
Total Gate Charge
VDD=-50V, ID=-15A
VGS=-10V
--
90
--
nC
Qgs
Gate to Source Charge

--
15
--

Qgd
Gate to Drain (Miller)Charge

--
36
--





Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current a2(Body Diode)

--
--
-30
A
VSD
Diode Forward Voltagea3
IS=-30A,VGS=0V
--
--
-1.5
V




Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Casea2
0.8
℃/W


a1Repetitive Rating: Pulse width limited by maximum junction temperature.

a2Surface Mounted on FR4 Board, t10sec.

a3Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.

a4Guaranteed by design, not subject to production

a5EAS conditionTj=25,VDD=-50V,VG=-10V,L=0.5mH,Rg=25Ω

Test circurt

Characteristics Curve:

CompanyWuxi Guang Lei electronic technology co., LTD

TEL:13961734102   Mr.yuan


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