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GL13P10B3
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GL13P10B3
Vdss:     -100 V
Package:      TO-251
Id:     -13 A
Rdson(typ):     250 mΩ
产品详情


General Description:

The GL13P10B3 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-251, which accords with the RoHS standard.




Features:

Fast Switching

Low Gate Charge and Rdson

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test




Applications:

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply



AbsoluteTc=25℃ unless otherwise specified):


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
-100
V
ID
Continuous Drain Current
-13
A

Continuous Drain Current TC = 100 °C
-9.5
A
IDMa1
Pulsed Drain Current
-30
A
VGS
Gate-to-Source Voltage
±20
V
dv/dta3
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
40
W
TJ,Tstg
Operating Junction and Storage Temperature Range
15055 to 150
TL
Maximum Temperature for Soldering
300




Electrical CharacteristicsTc=25℃ unless otherwise specified):


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=-250µA
-100
--
--
V
ΔBVDSS/ΔTJ
Bvdss Temperature Coefficient
ID=-250uA,Reference25
--
0.15
--
V/
IDSS
Drain to Source Leakage Current
VDS=-100,VGS=0V,Ta=25
--
--
-1
µA


VDS=-80V,VGS=0V,Ta=125
--
--
-250

IGSS(F)
Gate to Source Forward Leakage
VGS=+20V
--
--
10
µA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-20V
--
--
-10
µA




ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=-10V,ID=-13.0A
--
250
270
m
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=-250µA
-1.0
-1.9
-3.0
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=-10V,ID=-5A
12
25
--
S
Ciss
Input Capacitance
VGS=0V,VDS=-50V
f=1.0MHz
--
510
--
pF
Coss
Output Capacitance

--
170
--

Crss
Reverse Transfer Capacitance

--
115
--




Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
RL=-1.5,VDD = -50V
VGS=-10V,RG=1.5
--
11
--
ns
tr
Rise Time

--
12
--

td(OFF)
Turn-Off Delay Time

--
30
--

tf
Fall Time

--
12
--

Qg
Total Gate Charge
ID=-10.0A,VDD=-50V
VGS=-10V
--
16
--
nC
Qgs
Gate to Source Charge

--
4
--

Qgd
Gate to Drain (Miller)Charge

--
4.2
--





Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current (Body Diode)

--
--
-13
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
-30
A
VSD
Diode Forward Voltage
IS=-13A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=-13A,Tj = 25°C
dIF/dt=100A/us,VGS=0V
--
25
--
ns
Qrr
Reverse Recovery Charge

--
32
--
nC
Pulse width tp380µs,δ≤2%









Symbol
Parameter
Typ.
Units
RθJC
Junction-to-case
3.13
℃/W


a1:Repetitive rating; pulse width limited by maximum junction temperature

a3ISD =-13A,di/dt ≤100A/us,VDDBVDS, Start TJ=25

CompanyWuxi Guang Lei electronic technology co., LTD

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