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 GL30P03AD3
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GL30P03AD3
Vdss:     -30 V
Package:     QFN3.3×3.3
Id:     -30 A
Rdson(typ):     11.5 mΩ
Rdson(max):     15 mΩ
产品详情



General Description:

The GL30P03AD3 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is QFN 3.3×3.3, which accords with the RoHS standard.




Features:

RDS(ON) <15mΩ @ VGS=-10V (Typ11.5mΩ)

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation




Applications:

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply



Absolute(Tc= 25℃ unless otherwise specified)


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
-30
V
ID
Continuous Drain Current
-30
A
IDM
Pulsed Drain Current
-80
A
VGS
Gate-to-Source Voltage
±20
V
PD
Power Dissipation
35
W
TJTstg
Operating Junction and Storage Temperature Range
15055 to 150




Electrical Characteristics(Tc= 25℃ unless otherwise specified)


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
-30
--
--
V
IDSS
Drain to Source Leakage Current
VDS=-30V, VGS= 0V,Ta=25
--
--
-1.0
µA
IGSS(F)
Gate to Source Forward Leakage
VGS=+20V
--
--
0.1
µA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-20V
--
--
-0.1
µA




ON Characteristicsa3






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=-10V,ID=-15A
--
11.5
15
m
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=-250µA
-1.0
--
-1.9
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristicsa4






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=-5V,ID=-15A
15
--
--
S
Ciss
Input Capacitance
VGS=0V,VDS=-25V
f=1.0MHz
--
2130
--
pF
Coss
Output Capacitance

--
302
--

Crss
Reverse Transfer Capacitance

--
227
--




Resistive Switching Characteristicsa4






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
VDD=-15V,ID=-15A
VGS=-10V,RG=1
--
12
--
ns
tr
Rise Time

--
10
--

td(OFF)
Turn-Off Delay Time

--
25
--

tf
Fall Time

--
13
--

Qg
Total Gate Charge
VDD=-15V, ID=-20A
VGS=-10V
--
45.6
--
nC
Qgs
Gate to Source Charge

--
4.6
--

Qgd
Gate to Drain (Miller)Charge

--
11.1
--





Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current a2(Body Diode)

--
--
-30
A
VSD
Diode Forward Voltagea3
IS=-30A,VGS=0V
--
--
-1.2
V




Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Casea2
3.57
℃/W


a1Repetitive Rating: Pulse width limited by maximum junction temperature.

a2Surface Mounted on FR4 Board, t10sec.

a3Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.

a4Guaranteed by design, not subject to production



Test circuit & Characteristics Curve:




CompanyWuxi Guang Lei electronic technology co., LTD

TEL:13961734102   Mr.yuan


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