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GL22N70AN
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GL22N70AN
Vdss:     700 V
Package:     TO-3P(N)
Id:      22 A
Rdson(typ):     0.33 Ω
产品详情



General Description:

GL22N70AN, the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-3PN, which accords with the RoHS standard.



Features:

Fast Switching

Low ON Resistance(Typical Data:0.330Ω)

Low Gate Charge Minimize Switching loss

Fast Recovery Body Diode

100% Single Pulse avalanche energy Test



Applications:

Adaptor

Charger

SMPS Standby Power



Absolute(Tc= 25℃ unless otherwise specified)


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
700
V
ID
Continuous Drain Current
22
A
IDM
Pulsed Drain Current at VGS=10V
88
A
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
2500
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
290
W

Derating Factor above 25°C
2.32
W/
TJ,Tstg
Operating Junction and Storage Temperature Range
150,55 to 150
TL
TPAK
Maximum Temperature for Soldering
Leads at 0.63 in(1.6mm) from Case for 10 seconds, Package Body for 10 seconds
300
260


Caution Stresses greater than those in the Absolute Maximum Ratings may cause permanent damage to the device



Thermal Characteristics


Symbol
Parameter
Rating
Units
RθJC
Thermal Resistance, Junction-to-Case
0.43
℃/ W
RθJA
Thermal Resistance, Junction-to-Ambient
40
℃/ W


Electrical Characteristics(Tc= 25℃ unless otherwise specified)


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V,ID=250µA
700
--
--
V
IDSS
Drain to Source Leakage Current
VDS=700V, VGS=0V,Ta=25
--
--
10
µA


VDS=560V, VGS=0V,Ta=125
--
--
250

IGSS(F)
Gate to Source Forward Leakage
VGS=+30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-30V
--
--
-100
nA




ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=12.5A
--
330
360
m
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250µA
2.0
--
4.0
V
gfs
Forward Transconductance
VDS=15V,ID=11A
--
20
--
S




Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

Ciss
Input Capacitance
VGS=0V VDS=25V
f=1.0MHz
--
4100
--
pF
Coss
Output Capacitance

--
380
--

Crss
Reverse Transfer Capacitance

--
39
--




Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
ID=22A,VDD=350V
VGS=10V,Rg=25
--
55
--
ns
tr
Rise Time

--
121
--

td(OFF)
Turn-Off Delay Time

--
315
--

tf
Fall Time

--
140
--

Qg
Total Gate Charge
ID=22A,VDD=350V
VGS=10V
--
101
--
nC
Qgs
Gate to Source Charge

--
18
--

Qgd
Gate to Drain (Miller)Charge

--
43
--




Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

ISD
Continuous Source Current (Body Diode)

--
--
22
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
88
A
VSD
Diode Forward Voltage
IS=22A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=22A,Tj=25
di/dt=100A/μs,VGS=0V
--
470
--
ns
Qrr
Reverse Recovery Charge

--
6.2
--
uC
*Pulse width tp380µs,δ≤2%









Characteristics Curve:

CompanyWuxi Guang Lei electronic technology co., LTD

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