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GL1S50N06LA4
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GL1S50N06LA4
Vdss:     60 V
Package:      TO-251
Id:     50 A
Rdson(typ):     13.5 mΩ
Rdson(max):     18 mΩ
产品详情




General Description:

The GL1S50N06LA4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-252, which accords with the RoHS standard.



Features:

Fast Switching

Low Gate Charge and Rdson

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test



Applications:

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply



Absolute(Tc= 25℃ unless otherwise specified)


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
60
V
ID
Continuous Drain Current
50
A

Continuous Drain Current TC = 100 °C
35
A
IDM
Pulsed Drain Current
200
A
VGS
Gate-to-Source Voltage
±20
V
EAS a2
Single Pulse Avalanche Energy
300
mJ
EAR a1
Avalanche Energy ,Repetitive
50
mJ
IAR a1
Avalanche Current
28
A
dv/dt a3
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
85
W
TJTstg
Operating Junction and Storage Temperature Range
17555 to 175
TL
MaximumTemperature for Soldering
300





Electrical Characteristics(Tc= 25℃ unless otherwise specified)


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
60
--
--
V
ΔBVDSS/ΔTJ
Bvdss Temperature Coefficient
ID=250uA,Reference25
--
0.1
--
V/
IDSS
Drain to Source Leakage Current
VDS=60V,VGS=0V,Ta=25
--
--
1
µA


VDS=48V,VGS=0V,Ta=125
--
--
250

IGSS(F)
Gate to Source Forward Leakage
VGS=+20V
--
--
1
µA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-20V
--
--
-1
µA




ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=20A
--
13.5
18
m
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.5
1.85
2.5
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=5V,ID=20A
18
--
--
S
Ciss
Input Capacitance
VGS=0V,VDS=30V
f=1.0MHz
--
2050
--
pF
Coss
Output Capacitance

--
158
--

Crss
Reverse Transfer Capacitance

--
120
--




Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
ID=20A,VDD=30V
VGS=10V,RG=3.0
--
7.5
--
ns
tr
Rise Time

--
5.0
--

td(OFF)
Turn-Off Delay Time

--
28.0
--

tf
Fall Time

--
5.5
--

Qg
Total Gate Charge
ID=20A,VDD=30V
VGS=10V
--
50
--
nC
Qgs
Gate to Source Charge

--
6
--

Qgd
Gate to Drain (Miller)Charge

--
15
--






Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current (Body Diode)

--
--
50
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
200
A
VSD
Diode Forward Voltage
IS=50A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=20A,Tj = 25°C
dIF/dt=100A/us,VGS=0V
--
30
--
ns
Qrr
Reverse Recovery Charge

--
40
--
nC
Pulse width tp380µs,δ≤2%









Symbol
Parameter
Typ.
Units
RθJA
Junction-to-Ambient
 1.8
℃/W


a1:Repetitive rating; pulse width limited by maximum junction temperature

a2EAS condition : Tj=25 ,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω

a3ISD =20A,di/dt ≤100A/us,VDDBVDS, Start TJ=25

Characteristics Curve:



CompanyWuxi Guang Lei electronic technology co., LTD

TEL:13961734102   Mr.yuan

General Description:    

The GL1S50N06LA4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-252, which accords with the RoHS standard.

Features:

Fast Switching

Low Gate Charge and Rdson

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test

Applications:

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply


Absolute(Tc= 25℃ unless otherwise specified)


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
60
V
ID
Continuous Drain Current
50
A

Continuous Drain Current TC = 100 °C
35
A
IDM
Pulsed Drain Current
200
A
VGS
Gate-to-Source Voltage
±20
V
EAS a2
Single Pulse Avalanche Energy
300
mJ
EAR a1
Avalanche Energy ,Repetitive
50
mJ
IAR a1
Avalanche Current
28
A
dv/dt a3
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
85
W
TJTstg
Operating Junction and Storage Temperature Range
17555 to 175
TL
MaximumTemperature for Soldering
300





Electrical Characteristics(Tc= 25℃ unless otherwise specified)


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
60
--
--
V
ΔBVDSS/ΔTJ
Bvdss Temperature Coefficient
ID=250uA,Reference25
--
0.1
--
V/
IDSS
Drain to Source Leakage Current
VDS=60V,VGS=0V,Ta=25
--
--
1
µA


VDS=48V,VGS=0V,Ta=125
--
--
250

IGSS(F)
Gate to Source Forward Leakage
VGS=+20V
--
--
1
µA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-20V
--
--
-1
µA




ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=20A
--
13.5
18
m
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.5
1.85
2.5
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=5V,ID=20A
18
--
--
S
Ciss
Input Capacitance
VGS=0V,VDS=30V
f=1.0MHz
--
2050
--
pF
Coss
Output Capacitance

--
158
--

Crss
Reverse Transfer Capacitance

--
120
--




Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
ID=20A,VDD=30V
VGS=10V,RG=3.0
--
7.5
--
ns
tr
Rise Time

--
5.0
--

td(OFF)
Turn-Off Delay Time

--
28.0
--

tf
Fall Time

--
5.5
--

Qg
Total Gate Charge
ID=20A,VDD=30V
VGS=10V
--
50
--
nC
Qgs
Gate to Source Charge

--
6
--

Qgd
Gate to Drain (Miller)Charge

--
15
--






Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current (Body Diode)

--
--
50
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
200
A
VSD
Diode Forward Voltage
IS=50A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=20A,Tj = 25°C
dIF/dt=100A/us,VGS=0V
--
30
--
ns
Qrr
Reverse Recovery Charge

--
40
--
nC
Pulse width tp380µs,δ≤2%









Symbol
Parameter
Typ.
Units
RθJA
Junction-to-Ambient
 1.8
℃/W


a1:Repetitive rating; pulse width limited by maximum junction temperature

a2EAS condition : Tj=25 ,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω

a3ISD =20A,di/dt ≤100A/us,VDDBVDS, Start TJ=25

Characteristics Curve:



CompanyWuxi Guang Lei electronic technology co., LTD

TEL:13961734102   Mr.yuan


地址:无锡市新吴区清源路20号大学科技园立业楼E-207
电话:0510-85133188
传真:0510-85133188
邮箱:zuotangyun@163.com
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