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GL150N06AR
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GL150N06AR
Vdss:     60 V
Package:     TO-262
Id:     150 A
Rdson(typ):     3.5 mΩ
Rdson(max):     4.5 mΩ
产品详情


General Description:

The GL150N06AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-262, which accords with the RoHS standard.



Features:

Fast Switching

Low Gate Charge and Rdson

Low Reverse transfer capacitances

100% Single Pulse avalanche energy Test



Applications:

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply



Absolute(Tc= 25℃ unless otherwise specified)


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
60
V
ID
Continuous Drain Current
150
A

Continuous Drain Current TC = 100 °C
105
A
IDM
Pulsed Drain Current
600
A
VGS
Gate-to-Source Voltage
±20
V
EAS a2
Single Pulse Avalanche Energy
1400
mJ
EAR a1
Avalanche Energy ,Repetitive
50
mJ
IAR a1
Avalanche Current
65
A
dv/dt a3
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
220
W
TJTstg
Operating Junction and Storage Temperature Range
17555 to 175
TL
MaximumTemperature for Soldering
300





Electrical Characteristics(Tc= 25℃ unless otherwise specified):


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
60
--
--
V
ΔBVDSS/ΔTJ
Bvdss Temperature Coefficient
ID=250uA,Reference25
--
0.1
--
V/
IDSS
Drain to Source Leakage Current
VDS=60V,VGS= 0V,Ta=25
--
--
1
µA


VDS=48V,VGS=0V,Ta=125
--
--
250

IGSS(F)
Gate to Source Forward Leakage
VGS=+20V
--
--
1
µA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-20V
--
--
-1
µA




ON Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=75A
--
3.4
4.5
m
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250µA
2.0
--
4.0
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=5V, ID =75A
180
--
--
S
Ciss
Input Capacitance
VGS=0V,VDS=30V
f=1.0MHz
--
6500
--
pF
Coss
Output Capacitance

--
650
--

Crss
Reverse Transfer Capacitance

--
600
--




Resistive Switching Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
ID=30A,VDD=30V
VGS=10V,RG=2.5
--
26
--
ns
tr
Rise Time

--
25
--

td(OFF)
Turn-Off Delay Time

--
90
--

tf
Fall Time

--
40
--

Qg
Total Gate Charge
ID=30A,VDD=30V
VGS=10V
--
165
--
nC
Qgs
Gate to Source Charge

--
30
--

Qgd
Gate to Drain (Miller)Charge

--
65
--






Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current (Body Diode)

--
--
150
A
ISM
Maximum Pulsed Current (Body Diode)

--
--
600
A
VSD
Diode Forward Voltage
IS=50A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
IS=40A,Tj=25°C
dIF/dt=100A/us,VGS=0V
--
45
--
ns
Qrr
Reverse Recovery Charge

--
70
--
nC
Pulse width tp380µs,δ≤2%









Symbol
Parameter
Typ.
Units
RθJA
Junction-to-Ambient
1.8
℃/W
RθJC
Junction-to-Case
0.68
℃/W


a1:Repetitive rating; pulse width limited by maximum junction temperature

a2EAS condition : Tj=25,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω

a3ISD=150A,di/dt≤100A/us,VDDBVDS,Start TJ=25

Characteristics Curve:

CompanyWuxi Guang Lei electronic technology co., LTD

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