光磊电子科技有限公司
Guanglei Electronic Technology Co., Ltd.
分立器件 功率器件 高可靠供应商
咨询热线:0510-8513 3188
咨询热线:0510-8513 3188
                13912355536
更多热卖
Products
自由容器
QQ咨询:
CONTACT
咨询热线:
0510-85133188
地址:
无锡市新吴区清源路20号大学科技园立业楼E-207
更多热卖
GL100N03A4
分享到:
GL100N03A4
Vdss:     30 V
Package:     TO-252
Id:     100 A
Rdson(typ):     4.1 mΩ
Rdson(max):     5.5 mΩ
产品详情


General Description:

The GL100N03A4 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. The package form is TO-252, which accords with the RoHS standard.



Features:

RDS(ON) <5.5mΩ @ VGS=10V (Typ4.1mΩ)

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation



Applications:

Power switching application

Hard switched and high frequency circuits

Uninterruptible power supply



Absolute(Tc= 25℃ unless otherwise specified):


Symbol
Parameter
Rating
Units
VDSS
Drain-to-Source Voltage
30
V
ID
Continuous Drain Current
100
A

Continuous Drain Current (TC=100)
80
A
IDM
Pulsed Drain Current
400
A
VGS
Gate-to-Source Voltage
±20
V
PD
Power Dissipation
105
W
EAS
Single pulse avalanche energya5
1200
mJ
TJTstg
Operating Junction and Storage Temperature Range
17555 to 175






Electrical Characteristics(Tc= 25℃ unless otherwise specified):


OFF Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
30
--
--
V
IDSS
Drain to Source Leakage Current
VDS=30V, VGS= 0V,Ta = 25
--
--
1.0
µA
IGSS(F)
Gate to Source Forward Leakage
VGS=+20V
--
--
0.1
µA
IGSS(R)
Gate to Source Reverse Leakage
VGS=-20V
--
--
-0.1
µA




ON Characteristicsa3






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=50A
--
4.1
5.5
m
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250µA
1.0
1.7
3.0
V
Pulse width tp380µs,δ≤2%









Dynamic Characteristicsa4






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

gfs
Forward Transconductance
VDS=5V,ID=20A
32
--
--
S
Ciss
Input Capacitance
VGS=0V,VDS=15V
f=1.0MHz
--
4500
--
pF
Coss
Output Capacitance

--
1050
--

Crss
Reverse Transfer Capacitance

--
540
--




Resistive Switching Characteristicsa4






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

td(ON)
Turn-on Delay Time
VDD=10V,ID=30A
VGS=10V,RG=2.7
--
26
--
ns
tr
Rise Time

--
25
--

td(OFF)
Turn-Off Delay Time

--
90
--

tf
Fall Time

--
35
--

Qg
Total Gate Charge
VDD=10V, ID=30A
VGS=10V
--
38
--
nC
Qgs
Gate to Source Charge

--
8.5
--

Qgd
Gate to Drain (Miller)Charge

--
13
--







Source-Drain Diode Characteristics






Symbol
Parameter
Test Conditions
Rating
Units





Min.
Typ.
Max.

IS
Continuous Source Current a2(Body Diode)

--
--
180
A
VSD
Diode Forward Voltagea3
IS=100A,VGS=0V
--
--
1.5
V




Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Casea2
1.43
℃/W


a1Repetitive Rating: Pulse width limited by maximum junction temperature.

a2Surface Mounted on FR4 Board, t10sec.

a3Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.

a4Guaranteed by design, not subject to production

a5EAS conditionTj=25,VDD=15V,VG=10V,L=0.5mH,Rg=25Ω

Test circurt



地址:无锡市新吴区清源路20号大学科技园立业楼E-207
电话:0510-85133188
传真:0510-85133188
邮箱:zuotangyun@163.com
技术支持:乐识通
QQ:1741095090
光磊电子科技有限公司